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Three‐dimensional flow in a thin annular layer of silicon melt with bidirectional temperature gradients
Author(s) -
Wang Fei,
Peng Lan,
Zhang QuanZhuang
Publication year - 2014
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201400212
Subject(s) - marangoni effect , temperature gradient , materials science , flow (mathematics) , mechanics , silicon , surface tension , heat flux , marangoni number , thermodynamics , crystallization , free surface , flux (metallurgy) , melt flow index , heat transfer , composite material , physics , meteorology , copolymer , metallurgy , polymer
Bidirectional temperature gradients coexist virtually in surface tension driven flows. However, the simulations have been performed to the flow with only one temperature gradient. A series of 3 D numerical simulations are conducted to investigate the Marangoni‐thermocapillary flow of silicon melt in a thin annular layer with bidirectional temperature gradients. The temperature gradients are produced by the temperature difference Δ T between walls and the constant heat flux q on the bottom, respectively. When changing q , the melt presents different state evolutions at different Δ T . Furthermore, two critical q are found, one makes the minimum melt temperature higher than the crystallization temperature and the other makes the flow unsteady. Both of the critical heat fluxes decrease with increasing Δ T . q contributes more to the elevation of the melt temperature, while Δ T contributes more to the enhancement of the melt instability. In addition, the melt on the free surface flows mainly along the radial direction.

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