Twinning in GaAs nanowires on patterned GaAs(111)B | Zendy

Walther Thomas | Zendy; Krysa Andrey B. | Zendy

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Twinning in GaAs nanowires on patterned GaAs(111)B

Author(s) -

Walther Thomas,

Krysa Andrey B.

Publication year - 2015

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.201400166

Subject(s) - crystal twinning , nanowire , materials science , epitaxy , transmission electron microscopy , plasmon , scanning transmission electron microscopy , optoelectronics , band gap , macle , metalorganic vapour phase epitaxy , condensed matter physics , nanotechnology , layer (electronics) , microstructure , physics , metallurgy

We have studied twinning in GaAs nanowires grown via holes in a silica mask deposited on GaAs(111)B substrates by metal‐organic chemical vapour epitaxy without catalysts. Twins perpendicular to the growth direction form in the nanowires, their {111}‐type side facets leading to corrugation of their {110} side walls. The top facets are almost atomically smooth. Aberration corrected annular dark‐field scanning transmission electron microscopy reveals all twins are rotational, commencing with layers of Ga and finishing with As atoms. Energy‐loss spectroscopic profiling has shown no significant changes in the band‐gap or bulk plasmon energy at those twin boundaries, and the observed reduction of the interface plasmon energy by ∼0.13 eV is close to the detection limit of the technique, reflecting the very low energetic electronic changes related to twin formation.

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