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A study on the effect of oxygen implants in CuInSe2 by photoacoustic spectroscopy
Author(s) -
Zegadi Ameur,
Rouha Mustapha,
Satour Fatima Zohra
Publication year - 2015
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201400164
Subject(s) - photoacoustic spectroscopy , oxygen , irradiation , spectroscopy , absorption (acoustics) , absorption spectroscopy , photoacoustic imaging in biomedicine , analytical chemistry (journal) , materials science , layer (electronics) , ion , chemistry , optics , nanotechnology , physics , composite material , organic chemistry , chromatography , quantum mechanics , nuclear physics
This paper presents the results of an analysis on defect states changes following the irradiation of oxygen in CuInSe 2 single crystals by using photoacoustic spectroscopy. CuInSe 2 samples, n‐type conducting, of high quality grown by using the vertical Bridgman technique have been implanted at ambient temperature with O + with the energy of 40 keV with doses of 10 15 and 10 16 ions/cm 2 . A theoretical model based on two‐layer samples has been used to extract the absorption spectrum of only the implanted layer from that of the bulk. Oxygen is found to create a shallow defect at 31meV and a deep one at 256±2 meV. It has also led to the disappearance of some other defect levels originally detected in the samples prior to implantation.