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Crystal growth, quality characterization and THz properties of DAST crystals
Author(s) -
Bing Teng,
Shuhua Wang,
Ke Feng,
Lifeng Cao,
Degao Zhong,
Fei You,
Xuejun Jiang,
Lun Hao,
Qing Sun
Publication year - 2014
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201400147
Subject(s) - materials science , crystal (programming language) , terahertz radiation , diffraction , nucleation , optics , synchrotron radiation , energy conversion efficiency , optoelectronics , saturation (graph theory) , crystal growth , diffraction efficiency , synchrotron , characterization (materials science) , crystallography , chemistry , nanotechnology , physics , mathematics , organic chemistry , combinatorics , computer science , programming language
4‐N, N‐diethylamino‐4’‐N’‐methyl‐stilbazolium tosylate (DAST) crystals were grown by slope nucleation method (SNM). The crystal structure of grown DAST crystals was characterized by single crystal X‐ray diffraction with demonstrating X‐ray diffraction main peaks. The crystal defects were analyzed by the synchrotron radiation X‐ray topography. It was found that the unbalanced temperature gradient, the Teflon groove and the super saturation fluctuation were primary causes of crystal defects. Furthermore, widely tunable THz waves ranging from 1.16 to 16.71 THz were generated from 1 mm‐thick DAST crystal using the optical parametric oscillator (OPO). It was obtained that the THz output energy was 27.4 nJ (peak power of 2.74 W) and the highest conversion efficiency was 1.37 × 10 −5 at 3.8 THz.