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The growth and dislocation characterization of Yb 0.005 Y 0.848 Lu 0.147 VO 4 mixed laser crystal
Author(s) -
Shiming Zhang,
Bing Teng,
Degao Zhong,
Bingtao Zhang,
Chao Wang,
Yuyi Li,
LiTing Yang,
Peng You
Publication year - 2014
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201400120
Subject(s) - dislocation , crystal (programming language) , diffraction , materials science , crystallography , characterization (materials science) , single crystal , crystal structure , laser , orientation (vector space) , condensed matter physics , optics , chemistry , nanotechnology , physics , geometry , computer science , programming language , mathematics
A new mixed laser crystal, Yb 0.005 Y 0.848 Lu 0.147 VO 4 , has been successfully grown using the Czochralski method. An ICP‐OES was used to measure the concentrations of elements (Yb, Y, Lu, V) in the crystal, and the chemical formula was determined. X‐ray powder diffraction analysis shows that the crystal has ZrSiO 4 structure. A pair of edge dislocations with certain orientation was observed by the HREM, and the orientation was confirmed by the calibration of the diffraction spots. The formation mechanism of this type dislocation was given by analysis on structure and thermal expansion of crystal. The suggestion to avoid these dislocations was also given.