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Zr‐doped CeO 2 Hollow slightly‐truncated nano‐octahedrons: One‐pot synthesis, characterization and their application in catalysis of CO oxidation
Author(s) -
Liu Xiufang,
Liu Wei,
Zhang Xueying,
Han Lu,
Zhang Cong,
Yang Yanzhao
Publication year - 2014
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201400039
Subject(s) - x ray photoelectron spectroscopy , ostwald ripening , high resolution transmission electron microscopy , materials science , transmission electron microscopy , scanning electron microscope , zirconium , chemical engineering , analytical chemistry (journal) , doping , thermal stability , crystallography , nanotechnology , chemistry , metallurgy , optoelectronics , chromatography , engineering , composite material
Zirconium‐doped ceria hollow slightly‐truncated nano‐octahedrons (HTNOs) (Ce 1‐x Zr x O 2 ) were synthesized by a one‐pot, facile hydrothermal method. The morphology and crystalline structure were characterized with powder X‐ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM) and the high resolution transmission electron microscopy (HRTEM). The composition and chemical valence on the surface of the as‐prepared Ce 1‐x Zr x O 2 powders were detected by X‐ray photoelectron spectroscopy (XPS) and energy dispersive spectrometry (EDS). The surface area and pore size distribution of as‐obtained Zr‐doped ceria HTNOs were measured by N 2 adsorption‐desorption measurement. Mechanisms for the growth of Zr‐doped ceria HTNOs are proposed as both oriented attachment and Ostwald ripening process and the formation of the hollow structure is strongly dependent on the addition of Zr 4+ ions. Furthermore, the as‐obtained Zr‐doped ceria HTNOs revealed superior catalytic activity and thermal stability toward CO oxidation compared to pure ceria. It may provide a new path for the fabrication of inorganic hollow structures on introducing alien metal ions.