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Novel approaches to MOVPE material deposition for high efficiency Multijunction Solar Cells
Author(s) -
Timò G.,
Abagnale G.,
Armani N.,
Malvisi E.,
Carbi G.,
Farina F.,
Schineller B.
Publication year - 2014
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201300448
Subject(s) - metalorganic vapour phase epitaxy , materials science , chemical vapor deposition , solar cell , optoelectronics , wafer , deposition (geology) , gallium arsenide , homogeneity (statistics) , indium phosphide , nanotechnology , engineering physics , epitaxy , computer science , engineering , geology , layer (electronics) , paleontology , machine learning , sediment
Starting from a brief survey on the most important III‐V material engineering approaches which brought multijunction solar cells reaching an efficiency value of 44.7% to realization, new approaches to MOVPE material deposition are presented to further incrementing the solar cell performances and reduce the technology cost. A new MOVPE temperature profile tuning capability has been developed in order to maintain high thermal homogeneity at the wafer surface, also in the case of the deposition of strained structures, as well as to get a fast temperature control at the interfaces between arsenide and phosphide materials. Preliminary results on the possibility to combine group III‐V with group IV elements in the same MOVPE growth chamber in order to expand the band gap engineering possibilities are also presented and demonstrated at device level. As a proof of the concept, SiGe layers have been grown in the same MOVPE reactor used to grow III‐V compounds and InGaP/InGaAs/Ge Multijunction solar cell structures have been realized and characterized after SiGe deposition.