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Electrical characterization of a buried GaSb p‐n junction controlled by native defects
Author(s) -
Gorni M.,
Parisini A.,
Gombia E.,
Baldini M.,
Vantaggio S.,
Ghezzi C.
Publication year - 2014
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201300411
Subject(s) - doping , acceptor , materials science , optoelectronics , substrate (aquarium) , diffusion , electrical resistivity and conductivity , analytical chemistry (journal) , condensed matter physics , chemistry , oceanography , physics , engineering , chromatography , geology , electrical engineering , thermodynamics
Buried GaSb junctions were induced in Te‐doped GaSb bulk crystals by growing a heavily Zn‐doped GaAs layer on GaSb. However, the p ‐ n junction resulted to be located much more deeply with respect to the Zn diffusion front and originated by a local rising up of native acceptor density, which controls the p ‐type conductivity conversion of the GaSb substrate for about 1 μm beyond the Zn penetration depth. Admittance spectroscopy measurements supported the identification of such defects with the double native acceptor Ga Sb . Current‐voltage characteristics of the p ‐ n junction, performed after the removal of the GaAs layer, were here analyzed as a function of the temperature for different Zn doping levels and resulted consistent with the model previously proposed to explain the formation of the junctions.