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Epitaxial germanium deposited by MOVPE on InGaAs quantum dot stressors grown by MBE
Author(s) -
Bosi M.,
Attolini G.,
Frigeri P.,
Nasi L.,
Rossi F.,
Seravalli L.,
Trevisi G.
Publication year - 2014
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201300403
Subject(s) - epitaxy , overlayer , metalorganic vapour phase epitaxy , materials science , germanium , quantum dot , molecular beam epitaxy , optoelectronics , chemical vapor deposition , photoluminescence , nanotechnology , silicon , chemistry , layer (electronics)
Tensile strained Ge is considered as an enabling material for the integration of light emitting sources on Si because it shows unique indirect to direct bandgap transition and very high carrier mobilities (> 10.000 cm 2 /Vs). In the framework of this goal we aim to realize tensile germanium on In(Ga)As quantum dots (QD) stressors grown on GaAs and in this paper we focus on the study of deposition at different temperatures of Ge layers by Metal Organic Vapor Phase Epitaxy (MOVPE) on QD grown by Molecular Beam Epitaxy (MBE). The structures were characterized by Photoluminescence (PL) and Atomic Force Microscopy (AFM) before and after Ge epitaxy. Cross sectional TEM analysis shows that the Ge overlayer is epitaxially grown on the InGaAs/GaAs QD underlayer, with the same orientation. No structural defects are observed in the whole structures. Intermixing and In desorption occur at higher deposition temperature.