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Preliminary design of a novel high throughput CVD reactor for photovoltaic applications
Author(s) -
Masi Maurizio,
Cavallotti Carlo,
Boccalari Diego,
Castellana Francesco
Publication year - 2014
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201300391
Subject(s) - chemical vapor deposition , throughput , reactor design , materials science , deposition (geology) , chemical reactor , silicon , process engineering , photovoltaic system , chemical engineering , optoelectronics , nuclear engineering , computer science , electrical engineering , engineering , telecommunications , wireless , paleontology , sediment , biology
The computational design of a high throughput chemical vapor deposition (CVD) reactor to deposit silicon films is here presented. The reactor is characterized by a multichannel hot wall structure, atmospheric operation, and an alternated feeding of reactants from the two reactor sides to ensure the maximum consumption of precursors while keeping an acceptable film thickness uniformity. Particular care was ensured in developing an inlet/exhaust design to uniformly distribute/exhaust the reactants and byproducts through the different channels of the reactor.