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An effective growth method to improve the homogeneity of relaxor ferroelectric single crystal Pb(In 1/2 Nb 1/2 )O 3 ‐ Pb(Mg 1/3 Nb 2/3 )O 3 ‐PbTiO 3
Author(s) -
Wang Xian,
Zhang Haiwu,
Lin Di,
Wang Sheng,
Zhao Xiangyong,
Chen Jianwei,
Deng Hao,
Li Xiaobing,
Xu Haiqing,
Luo Haosu
Publication year - 2014
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201300320
Subject(s) - phase boundary , materials science , coercivity , ferroelectricity , analytical chemistry (journal) , crystal growth , homogeneity (statistics) , dielectric , single crystal , ternary operation , seed crystal , crystal (programming language) , crystallography , piezoelectricity , mineralogy , phase (matter) , condensed matter physics , chemistry , composite material , physics , statistics , optoelectronics , organic chemistry , mathematics , chromatography , computer science , programming language
Compositional segregation usually has negative effects on the growth of solid solution ferroelectric single crystals of Pb(In 1/2 Nb 1/2 )O 3 ‐Pb(Mg 1/3 Nb 2/3 )O 3 ‐PbTiO 3 (abbr. PIN‐PMN‐PT or PIMNT). A modified Bridgman method was adopted in this work to control the segregation and improve the compositional homogeneity significantly. The characteristic of this work is to use multiround growths and gradient composition raw materials in order to keep the PbTiO 3 concentration constant during the crystal growth. As an example, the two‐round growth of ternary PIN‐PMN‐PT single crystal is conducted in the same Pt crucible with gradient raw materials, where the first‐round boule was used as the seed crystal for the second‐round growth. Our results show that the as‐grown (Ф80 mm × 270 mm) PIN‐PMN‐PT crystals exhibit higher phase transition temperatures ( T c ∼180 °C, T r/t ∼110 °C) and larger coercive field ( E c ∼5–5.5 kV/cm), which are much better than the performances of Pb(Mg 1/3 Nb 2/3 )O 3 ‐PbTiO 3 crystals, and similar dielectric and piezoelectric performances (ε∼5000, tanδ∼1.25%, d 33 ∼1500 pC/N, k t ∼60%). And about 85 percent of the crystal boule grown by the two‐round growth technique could maintain its compositions around the morphotropic phase boundary.