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Dewetting and transport property enhancement: antimonide crystals for high performance electronic devices
Author(s) -
Ebnalwaled A. A.,
Duffar T.,
Sylla L.
Publication year - 2013
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201300014
Subject(s) - dewetting , antimonide , materials science , gallium antimonide , crystallite , optoelectronics , indium antimonide , composite material , wetting , metallurgy , superlattice
The dewetting technique has been applied to the growth of InSb and GaSb polycrystals. After optimization of the set up and growth parameters, four samples, 88 mm in length and 11 mm in diameter, have been obtained. Their electrical properties were investigated in relation to the type of solidification (attached, dewetted and so on). In spite of the polycrystalline structure of these samples, room temperature Hall mobilities obtained for dewetted antimonide samples have shown the highest values obtained till now. These results indicate that dewetting can be used to produce InSb and GaSb with high mobility for device applications.