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Room temperature epitaxial growth of (001) CeO 2 on (001) LaAlO 3 by pulsed laser deposition
Author(s) -
Ho YenTeng,
Chang KuoShu,
Liu KouChen,
Hsieh LiZen,
Liang MeiHui
Publication year - 2013
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201300002
Subject(s) - epitaxy , pulsed laser deposition , torr , analytical chemistry (journal) , materials science , partial pressure , transmission electron microscopy , oxygen , diffraction , oxygen pressure , crystallography , thin film , chemistry , nanotechnology , optics , physics , organic chemistry , layer (electronics) , chromatography , thermodynamics
The room temperature epitaxial growth of CeO 2 on lattice matched (001) LaAlO 3 substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po 2 ) is demonstrated. X‐ray diffraction analysis with 2‐Theta/rocking curve/Phi‐scan, cross‐sectional transmission electron microscopy with selected‐area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO 2 can be achieved at room temperature under Po 2 less than 2 × 10 −3 Torr. The best quality of grown film is obtained under Po 2 = 2 × 10 −5 Torr and degraded under Po 2 = 2 × 10 −6 Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO 2 and LAO is confirmed to be (001)CeO 2 //(001)LAO, [100] CeO2 //[110] LAO and [010] CeO2 //[ 1 ¯ 10] LAO . No obvious reduction reaction occurred, from Ce +4 turned into Ce +3 states, as reducing oxygen partial pressure during growth by PLD.