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The role of inner and internal radiation on the melt growth of sapphire crystal
Author(s) -
Tavakoli Mohammad Hossein,
Abasi Talaye Arjmand,
Omid Shirin,
MohammadiManesh Ebrahim
Publication year - 2013
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201200432
Subject(s) - sapphire , materials science , crystal (programming language) , thermal radiation , heat transfer , radiative transfer , crystal growth , radiation , mechanics , crystallography , thermodynamics , optics , chemistry , physics , computer science , programming language , laser
In this paper, for an inductively heated Czochralski furnace used to grow sapphire single crystal, influence of the inner (wall‐to‐wall) and crystal internal (bulk) radiation on the characteristics of the growth process such as temperature and flow fields, structure of heat transfer and crystal‐melt interface has been studied numerically using the 2D quasi‐steady state finite element method. The obtained results of global analysis demonstrate a strong dependence of thermal field, heat transport structure and crystal‐melt interface on both types of radiative heat transfer within the growth furnace.