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Numerical investigation of magnetic field effect on pressure in cylindrical and hemispherical silicon CZ crystal growth
Author(s) -
Mokhtari F.,
Bouabdallah A.,
Merah A.,
Oualli H.
Publication year - 2012
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201200309
Subject(s) - magnetic field , silicon , condensed matter physics , homogeneity (statistics) , magnetic pressure , materials science , convection , crystal (programming language) , thermal , homogenization (climate) , micro pulling down , mechanics , thermodynamics , magnetization , physics , metallurgy , biodiversity , ecology , statistics , mathematics , quantum mechanics , biology , computer science , programming language
The effect of axial magnetic field of different intensities on pressure in silicon Czochralski crystal growth is investigated in cylindrical and hemispherical geometries with rotating crystal and crucible and thermocapillary convection. As one important thermodynamic variable, the pressure is found to be more sensitive than temperature to magnetic field with strong dependence upon the vorticity field. The pressure at the triple point is proposed as a convenient parameter to control the homogeneity of the grown crystal. With a gradual increase of the magnetic field intensity the convection effect can be reduced without thermal fluctuations in the silicon melt. An evaluation of the magnetic interaction parameter critical value corresponding to flow, pressure and temperature homogenization leads to the important result that a relatively low axial magnetic field is required for the spherical system comparatively to the cylindrical one.