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Microstructural and optoelectrical properties of transparent conducting ZnO:Al thin films for organic solar cells
Author(s) -
You Zhong Zhi,
Hua Gu Jin,
Yong Yang Chun,
Jin Hou
Publication year - 2012
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201200201
Subject(s) - materials science , wurtzite crystal structure , thin film , diffractometer , band gap , sputter deposition , refractive index , transmittance , deposition (geology) , electrical resistivity and conductivity , figure of merit , analytical chemistry (journal) , optoelectronics , sputtering , composite material , zinc , nanotechnology , chemistry , metallurgy , scanning electron microscope , paleontology , engineering , sediment , electrical engineering , biology , chromatography
The Al‐doped zinc oxide (ZnO:Al) thin films were grown on glass substrates by the magnetron sputtering technique. The films were characterized with X‐ray diffractometer, four‐point probe and optical transmission spectroscopy, respectively. The dependence of microstructural, electrical and optical properties on deposition temperature was investigated. The results show that all the films have hexagonal wurtzite structure with highly c ‐axis orientation. And the microstrural and optoelectrical properties of the films are observed to be subjected to the deposition temperature. The ZnO:Al film prepared at the deposition temperature of 650 K possesses the best optoelectrical properties, with the lowest electrical resistivity (6.1×10 −4 Ω·cm), the highest average visible transmittance (85.3%) and the maximum figure of merit (0.41 Ω −1 ). The optical energy gap of the films was estimated from Tauc's law and observed to be an increasing tendency with the increment of the deposition temperature. Furthermore, the refractive index of the films was determined by the optical characterization methods and the dispersion behavior was studied by the single electronic oscillator model.