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The stress birefringence images of low angle grain boundaries in 6H‐SiC single crystals
Author(s) -
Xu Huayong,
Gao Yuqiang,
Peng Yan,
Jiang Kai,
Song Sheng,
Hu Xiaobo,
Xu Xiangang
Publication year - 2012
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201100593
Subject(s) - birefringence , materials science , grain boundary , perpendicular , dislocation , optics , optical microscope , silicon carbide , microscope , crystallography , polarized light microscopy , condensed matter physics , enhanced data rates for gsm evolution , optical axis , composite material , geometry , scanning electron microscope , chemistry , microstructure , lens (geology) , physics , telecommunications , mathematics , computer science
Low angle grain boundaries, also referred to as domain walls, is one of the major structural defects in c‐axis physical vapor transport (PVT) grown hexagonal Silicon Carbide. To investigate the nature of the low angle boundaries, polarized optical microscope was used. The low angle boundary gives bright stress birefringence images under polarizing optical microscope. Periodic extinction of the stress birefringence images occurs when the (0001)‐face SiC is rotated under polarizing optical microscope. The micro‐structure of the low angle boundary is proposed. Using dislocation elastic theory, it is theoretically confirmed that the domains consist of uniform pure edge dislocations with Burgers vectors perpendicular to the dislocation arrays. The simulation results coincide with the experimental observations.