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Microstructure and cathodoluminescence study of GaN nanowires without/with P‐doping
Author(s) -
Liu Baodan,
Hu Tao,
Wang Zaien,
Liu Lizhao,
Qin Fuwen,
Huang Nan,
Jiang Xin
Publication year - 2012
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201100574
Subject(s) - cathodoluminescence , nanowire , doping , microstructure , materials science , nanotechnology , optoelectronics , chemical engineering , composite material , luminescence , engineering
In this work, P‐doped GaN nanowires were synthesized in a co‐deposition CVD process and the effects of P‐doping on the microstructure and cathodoluminescence (CL) of GaN nanowires were studied in details. SEM observation and CL measurments demonstrated that P‐doping has led to a rough morphology evolution and a depression of the band‐gap emission of GaN nanowires, whereas the visible emission of GaN nanowires was obviously enhanced. Finally, the corresponding morphology transition and optical properties of GaN nanowires with P‐doping were discussed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)