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Growth and characterization of highly c ‐axis textured SrTiO 3 thin films directly grown on Si(001) substrates by ion beam sputter deposition
Author(s) -
Panomsuwan G.,
Cho S.P.,
Saito N.,
Takai O.
Publication year - 2012
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201100573
Subject(s) - full width at half maximum , materials science , thin film , sputtering , texture (cosmology) , analytical chemistry (journal) , substrate (aquarium) , scanning electron microscope , surface finish , pole figure , surface roughness , layer (electronics) , diffraction , optoelectronics , optics , chemistry , composite material , nanotechnology , chromatography , artificial intelligence , geology , computer science , image (mathematics) , physics , oceanography
Highly c ‐axis textured SrTiO 3 (STO) thin films have been directly grown on Si(001) substrates using ion beam sputter deposition technique without any buffer layer. The substrate temperature was varied, while other parameters were fixed in order to study effect of substrate temperature on morphology and texture evolution of STO films. X‐ray diffraction, pole figure analysis, atomic force microscope, and high‐resolution electron microscopy were used to characterize and confirm quality and texture of the STO films. The experimental results show that optimum substrate temperature to achieve highly c ‐axis textured films is at 700 °C. The full width at half maximum (FWHM) of 002 STO was found to be 2° and fraction of (011) orientation was as low as 1%. The surface morphology was Volmer‐Weber growth mode with a small roughness ∼1 nm. The lowest leakage current density (5.8 μA/cm 2 at 2 V) and the highest dielectric constant (ε STO ∼ 98) were found for highly c ‐axis textured films grown at 700 °C. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)