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Homoepitaxial growth and photoluminescence of self‐assembled In‐doped ZnS nanowire bundles
Author(s) -
Guo Taibo,
Chen Yiqing,
Liu Lizhu,
Cheng Yinfen,
Zhang Xinhua,
Ma Baojiao,
Wei Meiqin
Publication year - 2012
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201100497
Subject(s) - photoluminescence , nanowire , selected area diffraction , materials science , transmission electron microscopy , indium , doping , nanotechnology , evaporation , stacking , diffraction , electron diffraction , crystallography , optoelectronics , chemistry , optics , physics , organic chemistry , thermodynamics
Self‐assembled In (Indium)‐doped ZnS nanowire bundles were synthesized via a thermal evaporation method without using any template. Vapor ‐ solid homoepitaxial growth was found to be the key reason for the formation of close‐packed nanowire bundles grown on the surface of microscale sphere‐shaped ZnS crystal. X‐ray diffraction (XRD), selected area electron diffraction (SAED), and transmission electron microscopy (TEM) analysis demonstrate that the In‐doped ZnS nanowires have the cubic structure, and there are numerous stacking faults along the <111> direction. Photoluminescence (PL) spectrum shows that the spectrum mainly includes two parts: a weak violet emission band centering at about 380 nm and a strong green emission band centering at about 510 nm. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)