Numerical modelling of Czochralski growth of quadratic silicon crystals by means of a travelling magnetic field | Zendy

Miller W. | Zendy; FrankRotsch Ch. | Zendy; Czupalla M. | Zendy; Rudolph P. | Zendy

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Numerical modelling of Czochralski growth of quadratic silicon crystals by means of a travelling magnetic field

Author(s) -

Miller W.,

FrankRotsch Ch.,

Czupalla M.,

Rudolph P.

Publication year - 2012

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.201100494

Subject(s) - field (mathematics) , thermal , crystal (programming language) , convection , czochralski method , magnetic field , silicon , materials science , temperature gradient , component (thermodynamics) , flow (mathematics) , crystal growth , mechanics , condensed matter physics , chemistry , thermodynamics , crystallography , physics , metallurgy , meteorology , mathematics , computer science , quantum mechanics , pure mathematics , programming language

We present 3D simulations of melt flow in a Czochralski process of Si single crystal growth with a travelling magnetic field (TMF). The choice of the TMF significantly influences the thermal field in the melt. Using a downwards TMF field the induced convection causes a thermal field with a low radial component of the temperature gradient along the melt surface and a high vertical component below the crystal. Such a thermal field allows the kinetics‐based creation of {110} side facets, which was proven in several experimental runs. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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