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Numerical modelling of Czochralski growth of quadratic silicon crystals by means of a travelling magnetic field
Author(s) -
Miller W.,
FrankRotsch Ch.,
Czupalla M.,
Rudolph P.
Publication year - 2012
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201100494
Subject(s) - field (mathematics) , thermal , crystal (programming language) , convection , czochralski method , magnetic field , silicon , materials science , temperature gradient , component (thermodynamics) , flow (mathematics) , crystal growth , mechanics , condensed matter physics , chemistry , thermodynamics , crystallography , physics , metallurgy , meteorology , mathematics , computer science , quantum mechanics , pure mathematics , programming language
Abstract We present 3D simulations of melt flow in a Czochralski process of Si single crystal growth with a travelling magnetic field (TMF). The choice of the TMF significantly influences the thermal field in the melt. Using a downwards TMF field the induced convection causes a thermal field with a low radial component of the temperature gradient along the melt surface and a high vertical component below the crystal. Such a thermal field allows the kinetics‐based creation of {110} side facets, which was proven in several experimental runs. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)