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Fundamentals and practice of metal contacts to wide band gap semiconductor devices
Author(s) -
Borysiewicz M. A.,
Kamińska E.,
Myśliwiec M.,
Wzorek M.,
Kuchuk A.,
Barcz A.,
Dynowska E.,
di FortePoisson M.A.,
Giesen C.,
Piotrowska A.
Publication year - 2012
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201100490
Subject(s) - ohmic contact , semiconductor , materials science , thermal stability , optoelectronics , diffusion barrier , fabrication , metallizing , wide bandgap semiconductor , stack (abstract data type) , band gap , electrical contacts , nanotechnology , metal , engineering physics , chemistry , metallurgy , computer science , layer (electronics) , medicine , alternative medicine , organic chemistry , engineering , pathology , programming language
Presented are the theoretical and experimental fundamentals of the fabrication of ohmic contacts to n‐ and p‐type wide band gap semiconductors such as SiC and GaN. In particular, the Ni‐Si/n‐SiC, Al‐Ti/p‐SiC, Ti‐Al/n‐GaN and Ni‐Au/p‐GaN systems are discussed with the focus on the thermally activated chemical reactions taking place at the metal‐semiconductor interface, that lead to the appearance of ohmic behaviour in the contact. Examples of reactions at very intimate interfaces are shown, which are irresolvable using even such sophisticated characterisation methods as high‐resolution transmission electron microscopy and can only be explained using modelling. The issue of thermal stability of the contacts is discussed and the introduction of specifically designed diffusion barriers (eg. Ta‐Si‐N) into the contact metallisation stack is presented as a solution improving drastically the thermal stability of the contacts without degrading their electrical properties. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)