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First principle studies on molecular doping of ZnO thin films by As 2 O 3
Author(s) -
Sorgenfrei T.,
Bachem K. H.,
Schneider J.,
Kirste L.,
Kunzer M.,
Fiederle M.
Publication year - 2012
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201100470
Subject(s) - dopant , molecular beam epitaxy , doping , photoluminescence , materials science , thin film , analytical chemistry (journal) , secondary ion mass spectrometry , zinc , molecule , chemistry , epitaxy , optoelectronics , nanotechnology , ion , organic chemistry , layer (electronics) , metallurgy
This work investigates the extrinsic molecular doping of zinc oxide (ZnO) thin films grown by plasma enhanced molecular beam epitaxy (P‐MBE). The dopant was thermally evaporated arsenic trioxide (formula: As 2 O 3 in the solid state), which appears as As 4 O 6 molecule in the gaseous phase. Cracking experiments of these As4O6 molecules were made using a radio frequency oxygen plasma. Structural, chemical and optical investigations were made with (High Resolution) X‐ray diffraction (HRXRD), secondary ion mass spectroscopy (SIMS) and photoluminescence (PL). These results show high incorporation rates (about 2x10 18 cm ‐3 ) and optical activity of the dopant. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)