Effect of laser fluence on c‐axis orientation of LiNbO 3  piezoelectric films on nanocrystalline diamond by pulsed laser deposition | Zendy

Wang Xinchang | Zendy; Tian Sifang | Zendy; Man Weidong | Zendy; Jia Jianfeng | Zendy; Shi Xinwei | Zendy

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Effect of laser fluence on c‐axis orientation of LiNbO 3 piezoelectric films on nanocrystalline diamond by pulsed laser deposition

Author(s) -

Wang Xinchang,

Tian Sifang,

Man Weidong,

Jia Jianfeng,

Shi Xinwei

Publication year - 2012

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.201100396

Subject(s) - materials science , fluence , nanocrystalline material , pulsed laser deposition , crystallinity , amorphous solid , layer (electronics) , piezoelectricity , laser , thin film , surface roughness , diamond , deposition (geology) , optoelectronics , optics , nanotechnology , composite material , crystallography , chemistry , paleontology , physics , sediment , biology

Completely c‐axis oriented LiNbO 3 piezoelectric films have been deposited on nanocrystalline diamond (NCD)/Si substrates with SiO 2 buffer layer by pulsed laser deposition. The amorphous SiO 2 buffer layer was formed on NCD/Si substrates by sol‐gel method. The c‐axis orientation and crystallinity of LiNbO 3 films are strongly dependent on the laser fluence, and the laser fluence 3.6 J/cm 2 is found to be the optimal value for the growth of oriented LiNbO 3 film, which has a smooth surface with composed of a large mount of uniform grains. The average surface roughness of LiNbO 3 films is about 6.7 nm.

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