Premium
Effect of laser fluence on c‐axis orientation of LiNbO 3 piezoelectric films on nanocrystalline diamond by pulsed laser deposition
Author(s) -
Wang Xinchang,
Tian Sifang,
Man Weidong,
Jia Jianfeng,
Shi Xinwei
Publication year - 2012
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201100396
Subject(s) - materials science , fluence , nanocrystalline material , pulsed laser deposition , crystallinity , amorphous solid , layer (electronics) , piezoelectricity , laser , thin film , surface roughness , diamond , deposition (geology) , optoelectronics , optics , nanotechnology , composite material , crystallography , chemistry , paleontology , physics , sediment , biology
Completely c‐axis oriented LiNbO 3 piezoelectric films have been deposited on nanocrystalline diamond (NCD)/Si substrates with SiO 2 buffer layer by pulsed laser deposition. The amorphous SiO 2 buffer layer was formed on NCD/Si substrates by sol‐gel method. The c‐axis orientation and crystallinity of LiNbO 3 films are strongly dependent on the laser fluence, and the laser fluence 3.6 J/cm 2 is found to be the optimal value for the growth of oriented LiNbO 3 film, which has a smooth surface with composed of a large mount of uniform grains. The average surface roughness of LiNbO 3 films is about 6.7 nm.