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The correlation between spatial alignment of dislocations, grain orientation, and grain boundaries in multicrystalline silicon
Author(s) -
Schmid E.,
Würzner S.,
Funke C.,
Behm Th.,
Helbig R.,
Pätzold O.,
Berek H.,
Stelter M.
Publication year - 2012
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201100373
Subject(s) - misorientation , electron backscatter diffraction , grain boundary , materials science , condensed matter physics , dislocation , crystallography , slip (aerodynamics) , silicon , orientation (vector space) , grain boundary strengthening , geometry , metallurgy , composite material , microstructure , chemistry , physics , mathematics , thermodynamics
An experimental study of the correlation between dislocations, grain orientation, and grain boundaries in multicrystalline silicon (mc‐Si) bulk crystals is presented. Selected mc‐Si samples revealing typical structural patterns like clustering or line‐up of dislocations in the vicinity of grain boundaries are measured by electron backscatter diffraction (EBSD). The orientation of dislocation slip planes and twin boundary planes as well as the relationship between the misorientation of neighbouring grains and the spatial alignment of dislocations are analyzed on the basis of the relevant pole figures calculated from EBSD scans. The effect of grain boundaries on the behaviour of dislocations seems to be related to the presence or absence of a common slip system on both sides of the boundary and hence, to the type of lattice misorientation between involved grains. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)