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Flux Bridgman growth and the influence of annealing temperatures on PL properties of ZnO single crystals
Author(s) -
Xu Jiayue,
He Qingbo,
Shen Hui,
Jin Min,
Zhang Yan,
Li Xinhua
Publication year - 2011
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201100361
Subject(s) - annealing (glass) , photoluminescence , ultraviolet , blueshift , impurity , materials science , analytical chemistry (journal) , vacancy defect , crystal (programming language) , spectral line , chemistry , crystallography , optoelectronics , metallurgy , physics , organic chemistry , chromatography , astronomy , computer science , programming language
Transparent ZnO crystals were obtained by the flux Bridgman method from high temperature solution of 22 mol% ZnO‐78 mol% PbF 2 system. The influence of annealing temperatures on the photoluminescence (PL) of ZnO crystal was investigated. An ultraviolet emission peak at about 379 nm was observed in PL spectra and the peak position has a weak blueshift for annealed samples. A green band centered at 523 nm appeared in the annealed samples and its intensity enhanced with the increase of annealing temperatures, while the intensity of the ultraviolet peak decreased considerably. However, the ultraviolet emission peak became the strongest after annealing at 1000 °C. This phenomenon was considered to be associated with oxygen vacancy and F ‐ impurities induced by the PbF 2 flux. The results show that high temperature annealing in air seems helpful for improving the PL properties of ZnO crystal. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)