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Impurity induced structural phase transformations in melt grown single crystals of lead iodide
Author(s) -
Chaudhary S. K.,
Kaur H.
Publication year - 2011
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201100250
Subject(s) - impurity , iodide , phase (matter) , octahedron , semiconductor , crystal growth , crystallography , chemistry , materials science , resistive touchscreen , chemical physics , chemical engineering , crystal structure , inorganic chemistry , optoelectronics , organic chemistry , electrical engineering , engineering
Abstract Lead iodide is a wide‐band gap and highly resistive semiconductor considered to be a promising room temperature nuclear detector. The phenomenon of polytypism is posing interesting problems of phase transformations among its polytypic modifications and formation of polytypic admixture during growth due to native impurities. Transformations have also been observed even when the material is stored for few months that causes deterioration in functioning of the PbI 2 devices. Lead iodide has been purified and single crystals were grown using zone‐refining system. The observed phase transformations during growth and storage have been explained in the light of distortion of [PbI 6 ] 4‐ octahedron due to impurities present in the material and the known crystal structures of PbI 2 . (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)