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Influence of reduced working frequencies on the floating‐zone growth of silicon single crystals
Author(s) -
Menzel R.,
Rost A.,
Luedge A.,
Riemann H.
Publication year - 2011
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201100230
Subject(s) - induction coil , materials science , electrical resistivity and conductivity , silicon , electric arc , deflection (physics) , crystal growth , electromagnetic coil , analytical chemistry (journal) , mechanics , condensed matter physics , chemistry , crystallography , optics , electrical engineering , physics , metallurgy , electrode , engineering , chromatography
Lowering the working frequency in the inductively heated floating zone growth of Si Single crystals will reduce the risk of arcing at the induction coil. This is of particular interest in the growth of large diameter crystals. In the current paper we present results from growth experiments at lower frequencies, 2 MHz and 1.7 MHz. It is found that the growth of dislocation‐free crystals is possible at these frequencies and cause distinct changes in the interface deflection and radial resistivity profiles. Results from numerical simulation of the melt flow at different frequencies are presented. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)