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Haze in sapphire crystals grown by SAPMAC method
Author(s) -
Zhang Lunyong,
Zuo Hongbo,
Zhou Ji,
Sun Jianfei,
Xing Dawei,
Han Jiecai
Publication year - 2011
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201100122
Subject(s) - haze , sapphire , crystal (programming language) , crystallization , front (military) , materials science , crystal growth , optics , chemistry , crystallography , meteorology , physics , laser , organic chemistry , computer science , programming language
Abstract Haze defect in SAPMAC method grown sapphire crystal was studied in detail. It is shown that haze is composed by a large number of CO 2 bubbles, and haze always appears in the axis region of the crystal since the bubbles formed in front of the crystallization surface are most always draged to the convection rolls in front of the central part of the crystallizaiton surface by melt and then engulfed by the rolls. Moreover, the effects of pulling rate on the formation of haze were analyzed and means for restraining haze was suggested. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)