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Low temperature polycrystalline silicon film formation by metal induced crystallization with nickel salt derived by ultrasonic spray pyrolysis
Author(s) -
Yang Mingfei,
Sun Xiao Wei,
Yu Hong Yu,
Li Junshuai,
Hu Junhui
Publication year - 2011
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201100073
Subject(s) - nickel , crystallization , dissolution , materials science , silicon , raman spectroscopy , amorphous solid , chemical engineering , crystallite , amorphous silicon , pyrolysis , substrate (aquarium) , inorganic chemistry , metallurgy , crystalline silicon , chemistry , crystallography , optics , physics , oceanography , engineering , geology
Solution‐based nickel induced crystallization of amorphous silicon (a‐Si) films was performed. The nickel solution was prepared by dissolving (CH 3 CO 2 ) 2 Ni in deionized water and applied uniformly on a‐Si films by low‐cost ultrasonic spray pyrolysis method. Crystallization could be realized for a‐Si films coated with a 0.2 M nickel solution and annealed at 500 °C. The effect of substrate temperature during nickel solution deposition was analyzed. Micro‐Raman and x‐ray diffraction measurement show that a‐Si is fully crystallized at 550 °C for 7 h with a nickel concentration of 0.8 M. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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