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Crystallography and cathodoluminescence of ultra‐long GaN nanowires
Author(s) -
Liu B. Y.,
Wu A. M.,
Qin F. W.
Publication year - 2011
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201100064
Subject(s) - cathodoluminescence , wurtzite crystal structure , nanowire , materials science , scanning electron microscope , transmission electron microscopy , atmospheric temperature range , gallium nitride , optoelectronics , analytical chemistry (journal) , nanotechnology , chemistry , luminescence , composite material , layer (electronics) , metallurgy , zinc , physics , chromatography , meteorology
Ultra‐long GaN nanowires have been synthesized via a simple thermal evaporation process by heating mixed GaN and Ga 2 O 3 powders in a conventional resistance furnace under ammonia gas at 1150 °C. The average length of GaN nanowires is estimated to be more than 100 μm after 30‐min growth, corresponding to a fast growth rate of more than 200 μm/h. Scanning electron microscope (SEM) observation indicated that the diameter of GaN nanowires was rather uniform along the growth direction and in the range of 100–200 nm. X‐ray diffraction (XRD) and transmission electron microscope (TEM) measurements confirmed that the GaN nanowires are crystalline wurtzite‐type hexagonal structure. Room‐temperature cathodoluminescence (CL) measurement indicated that an obvious red‐shift of the near band‐edge emission peak centered at 414 nm of the ultra‐long GaN nanowires and a wide shoulder in the range of 600–700 nm were observed. Possible reasons responsible for the red‐shift of the near band‐edge emission of the ultra‐long GaN nanowires was discussed. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)