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Growth of GaSe and GaS single crystals
Author(s) -
Kokh K. A.,
Andreev Yu. M.,
Svetlichnyi V. A.,
Lanskii G. V.,
Kokh A. E.
Publication year - 2011
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201100055
Subject(s) - raman spectroscopy , field (mathematics) , chemistry , materials science , crystallography , optics , analytical chemistry (journal) , physics , organic chemistry , mathematics , pure mathematics
The paper describes principal manipulations to prepare single crystals of GaSe and GaS. A new simple method of synthesis with single‐zone heating furnace is proposed. Growth of crystals was performed by modified Bridgman method with the use of rotating heat field. Raman and optical depth spectra show high structural and optical quality of obtained crystals. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)