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Characterization of ion beam sputtered ZrN coatings prepared at different substrate temperatures
Author(s) -
Larijani M. M.,
Kiani M.,
Tanhayi M.,
Majdabadi A.
Publication year - 2011
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201100001
Subject(s) - zirconium nitride , materials science , substrate (aquarium) , electrical resistivity and conductivity , coating , sputtering , ion beam assisted deposition , analytical chemistry (journal) , nitride , ion beam , zirconium , composite material , ion , thin film , metallurgy , layer (electronics) , titanium nitride , nanotechnology , chemistry , oceanography , engineering , organic chemistry , chromatography , electrical engineering , geology
Zirconium nitride (ZrN) coatings were prepared on Si (100) by single ion beam sputtering in N 2 and Ar mixture at different substrate temperatures. Structure and morphology of the ZrN coatings were analyzed using X‐ray diffraction and atomic force microscopy. Rutherford backscattering technique was utilized for the determination of composition and thickness of the coatings. Electrical properties of the ZrN coatings were determined by four point‐ probe and Hall test. The results showed that the growth of ZrN with a preferred (111) orientation was achieved. The coating thickness depended on the substrate temperature and coating surface roughly remained smooth. The resistivity of the coatings varied from 1× 10 ‐3 to 14× 10 ‐3 Ω cm depending on the substrate temperature. A correlation between resistivity and charge carrier density was established to explain the electrical behavior of the coatings. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)