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Growth behavior of CuPc films by physical vapor deposition
Author(s) -
Chiu YuChian,
Chen BingHong,
Jan DaJeng,
Tang ShiowJing,
Chiu KuanCheng
Publication year - 2011
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201000683
Subject(s) - activation energy , substrate (aquarium) , arrhenius plot , deposition (geology) , evaporation , chemical vapor deposition , chemistry , physical vapor deposition , steric effects , vacuum deposition , tin , materials science , indium , thin film , analytical chemistry (journal) , stereochemistry , nanotechnology , organic chemistry , thermodynamics , physics , paleontology , sediment , biology , geology , oceanography
Various Cu‐phthalocyanine (CuPc) films were grown from physical vapor deposition on top of indium‐tin‐oxide glass substrates by controlling substrate temperature ( T sub ), source temperature ( T sou ), and growth time. From side‐view SEM pictures, the growth rates for these CuPc films are estimated and can be categorized into three regions. From the Arrhenius plot of growth rate versus 1/ T sub , the activation energy E A can be obtained. As T sou = 390 °C, for region (A) with T sub < 140 °C, the growth of CuPc films is dominated by the adhesion process with E A = 810 meV. For region (B) with 140 °C < T sub < 320 °C, the growth is then limited by the steric character associated with the organic molecular solids with E A = 740 meV. For region (C) with T sub > 320 °C, the re‐evaporation of the CuPc adhered molecules from the interface becomes dominant. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)