z-logo
Premium
Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se 2 thin film solar cells
Author(s) -
Acciarri M.,
Binetti S.,
Le Donne A.,
Lorenzi B.,
Caccamo L.,
Miglio L.,
Moneta R.,
Marchionna S.,
Meschia M.
Publication year - 2011
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201000670
Subject(s) - sputtering , copper indium gallium selenide solar cells , evaporation , solar cell , deposition (geology) , substrate (aquarium) , materials science , layer (electronics) , thin film , selenium , sputter deposition , chemical engineering , metal , metallurgy , analytical chemistry (journal) , chemistry , optoelectronics , nanotechnology , environmental chemistry , paleontology , oceanography , physics , sediment , biology , geology , engineering , thermodynamics
In this paper we report a new method for Cu(In,Ga)Se 2 deposition for solar cell application. Differently from the common co‐evaporation process, an alterative approach for thin film Cu(In,Ga)Se 2 has been tested: the sputtering deposition of metal elements combined with the selenium evaporation. We have studied the relationships between the growth parameters of our hybrid sputtering/evaporation method and the chemical‐physical properties of the CIGS films. The cells are completed with a CdS buffer layer deposited by chemical bath deposition and ZnO + ITO deposited by RF sputtering. Test solar cells of 0.5 cm 2 have shown an efficiency of 10% and 2.5% on glass and stainless steel substrate respectively. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom