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Photoluminescence and radiation damage in W, Mg, Ca doped Bi 4 Ge 3 O 12 crystals
Author(s) -
Yu Pingsheng,
Su Liangbi,
Tang Huili,
Zhao Hengyu,
Guo Xin,
Yang Qiuhong,
Xu Jun
Publication year - 2011
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201000654
Subject(s) - photoluminescence , doping , radiation , ultraviolet , crystal (programming language) , analytical chemistry (journal) , materials science , emission intensity , emission spectrum , absorption (acoustics) , physics , luminescence , spectral line , optics , optoelectronics , chemistry , chromatography , astronomy , computer science , programming language
Spectral properties and radiation damage in W, Mg and Ca doped Bi 4 Ge 3 O 12 (W:BGO, Mg:BGO, Ca:BGO) crystals before and after thermal treatment and gamma‐ray (γ‐) or ultraviolet (UV) radiation were studied. The absorption and the photoluminescence (PL) spectra of doped BGO crystals in visible region were measured. Before γ or UV radiation, the emission intensity of W:BGO crystal is stronger than that of pure BGO at about 500 nm. After γ radiation (10k Gy), the emission intensities of doped BGO are all weaker than pure BGO under identically condition. However, the emission intensity of W:BGO is stronger than that of pure BGO after UV exposure (10k Gy). Thermal treated (annealed in N 2 at 550 °C for 6 h) W:BGO has shown a much stronger emission intensity than others. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)