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Growth and characterization of heavily doped silicon crystals
Author(s) -
Scala R.,
Porrini M.,
Borionetti G.
Publication year - 2011
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201000604
Subject(s) - silicon , dopant , doping , characterization (materials science) , substrate (aquarium) , materials science , antimony , boron , crystal growth , arsenic , nanotechnology , crystal (programming language) , optoelectronics , engineering physics , crystallography , chemistry , metallurgy , computer science , geology , engineering , oceanography , organic chemistry , programming language
Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market of discrete devices and its trend towards lower and lower resistivity levels for the silicon substrate. The growth of such heavily doped, large‐diameter crystals poses several new challenges to the crystal grower, and the presence of a high dopant concentration in the crystal affects significantly its main properties, requiring also the development of dedicated characterization techniques. This paper illustrates the recent advances in the growth and characterization of silicon crystals heavily doped with antimony, arsenic, phosphorus and boron. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)