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Combustion synthesis of one‐dimensional nanocrystalline silicon carbide
Author(s) -
Soszyński M.,
Dąbrowska A.,
Bystrzejewski M.,
Huczko A.
Publication year - 2010
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201000351
Subject(s) - nanocrystalline material , combustion , silicon carbide , raman spectroscopy , materials science , silicon , chemical engineering , analytical chemistry (journal) , spectroscopy , nanotechnology , chemistry , metallurgy , optics , organic chemistry , quantum mechanics , physics , engineering
Beta‐SiC (cubic phase) nanowires (SiCNWs) have been grown spontaneously during the autothermal self‐propagating high‐temperature synthesis (SHS) from elemental silicon and poly(tetrafluoroethylene) (PTFE) powder mixtures in oxygen‐enriched atmosphere. The combustion process was on‐line monitored using high‐speed photography in order to estimate the reaction processing time which was well below 1 s. From the emission spectroscopy the averaged combustion temperature was evaluated to be close to 2000 K. The products were characterized by wet chemical analysis, X‐ray diffraction, scanning and transmission microscopy, and Raman spectroscopy. The raw products were processed by wet chemistry to obtain pure (above 90%) well‐crystallized one‐dimensional single crystals of SiCNWs. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)