Influence of SiO 3  2‐  impurity on growth habit of potassium dihydrogen phosphate crystal | Zendy

Ding Jianxu | Zendy; Lu Yongqiang | Zendy; Wang Shenglai | Zendy; Mu Xiaoming | Zendy; Gu Qingtian | Zendy; Wang Zhengping | Zendy; Sun Yun | Zendy; Liang Xiaoling | Zendy; Xu Xinguang | Zendy; Sun Xun | Zendy; Liu Wenjie | Zendy; Liu Guangxia | Zendy; Zhu Shengjun | Zendy

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Influence of SiO 3 2‐ impurity on growth habit of potassium dihydrogen phosphate crystal

Author(s) -

Ding Jianxu,

Lu Yongqiang,

Wang Shenglai,

Mu Xiaoming,

Gu Qingtian,

Wang Zhengping,

Sun Yun,

Liang Xiaoling,

Xu Xinguang,

Sun Xun,

Liu Wenjie,

Liu Guangxia,

Zhu Shengjun

Publication year - 2010

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.201000298

Subject(s) - impurity , potassium , crystal (programming language) , doping , crystal growth , analytical chemistry (journal) , chemistry , materials science , crystallography , metallurgy , optoelectronics , organic chemistry , chromatography , computer science , programming language

By altering the concentration of silicate (SiO 3 2‐ ) impurity in the solution, a series of potassium dihydrogen phosphate (KDP) crystals was obtained by the conventional temperature cooling and the rapid growth methods, respectively. It was observed that the presence of SiO 3 2‐ made KDP crystals tapering in conventional cooling method, while more SiO 3 2‐ induced inclusions at prismatic sectors in the rapid growth method. Laser‐polarization‐interference results showed that SiO 3 2‐ extended the dead zone and reduced the growth rate of (100) face of KDP crystals. The negative influence of SiO 3 2‐ on the growth was considered absolutely similar to the effect of cations. It was also suggested that the stability of solution doped with SiO 3 2‐ was improved without seed crystals, while it was destructed with seed crystals. The inhibition mechanism was analyzed in terms of SiO 3 2‐ absorption on (100) face. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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