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Influence of SiO 3 2‐ impurity on growth habit of potassium dihydrogen phosphate crystal
Author(s) -
Ding Jianxu,
Lu Yongqiang,
Wang Shenglai,
Mu Xiaoming,
Gu Qingtian,
Wang Zhengping,
Sun Yun,
Liang Xiaoling,
Xu Xinguang,
Sun Xun,
Liu Wenjie,
Liu Guangxia,
Zhu Shengjun
Publication year - 2010
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201000298
Subject(s) - impurity , potassium , crystal (programming language) , doping , crystal growth , analytical chemistry (journal) , chemistry , materials science , crystallography , metallurgy , optoelectronics , organic chemistry , chromatography , computer science , programming language
By altering the concentration of silicate (SiO 3 2‐ ) impurity in the solution, a series of potassium dihydrogen phosphate (KDP) crystals was obtained by the conventional temperature cooling and the rapid growth methods, respectively. It was observed that the presence of SiO 3 2‐ made KDP crystals tapering in conventional cooling method, while more SiO 3 2‐ induced inclusions at prismatic sectors in the rapid growth method. Laser‐polarization‐interference results showed that SiO 3 2‐ extended the dead zone and reduced the growth rate of (100) face of KDP crystals. The negative influence of SiO 3 2‐ on the growth was considered absolutely similar to the effect of cations. It was also suggested that the stability of solution doped with SiO 3 2‐ was improved without seed crystals, while it was destructed with seed crystals. The inhibition mechanism was analyzed in terms of SiO 3 2‐ absorption on (100) face. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)