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Impedance analysis and high temperature conduction mechanism of flux grown Pb(Zn 1/3 Nb 2/3 ) 0.91 Ti 0.09 O 3 single crystal
Author(s) -
Singh B. K.,
Kumar B.
Publication year - 2010
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201000287
Subject(s) - activation energy , thermal conduction , thermistor , atmospheric temperature range , relaxation (psychology) , analytical chemistry (journal) , vacancy defect , electrical resistivity and conductivity , conductivity , materials science , chemistry , condensed matter physics , thermodynamics , crystallography , electrical engineering , psychology , social psychology , physics , chromatography , composite material , engineering
The electrical properties of Pb(Zn 1/3 Nb 2/3 ) 0.91 Ti 0.09 O 3 single crystals over a wide range of frequencies (20 Hz to 2 MHz) and temperature (30 to 490 °C) were studied using impedance spectroscopic technique. A strongly frequency dependant Debye type relaxation process in crystals was observed. The activation energy for relaxation was found to be 1.72 eV. The nature of Cole‐Cole plot reveals the contribution of only grain (bulk) effect in the sample. The temperature dependant conductivity was found to different in different temperature regions, which shows the presence of different carrier for conduction. The activation energy for conduction in the order of 1.69 eV suggested that the conduction process in higher temperature region is governed by the presence of lead vacancy defect in the sample. Further, the negative temperature thermistor behaviour of the system was explored and various associated parameters were calculated. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)