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Debye temperature and melting point of II‐VI and III‐V semiconductors
Author(s) -
Kumar V.,
Jha V.,
Shrivastava A. K.
Publication year - 2010
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201000268
Subject(s) - debye model , melting point , semiconductor , debye , thermodynamics , chemistry , simple (philosophy) , energy (signal processing) , plasmon , condensed matter physics , physics , quantum mechanics , philosophy , organic chemistry , epistemology
In this paper, simple relations are proposed for the calculation of Debye temperature θ D and melting point T m of II‐VI and III‐V zincblende semiconductors. Six relations are proposed to calculate the value of θ D . Out of these six relations, two are based on plasmon energy data and the others on molecular weight, melting point, ionicity and energy gap. Three simple relations are proposed to calculate the value of T m . They are based on plasmon energy, molecular weight and ionicity of the semiconductors. The average percentage deviation of all nine equations was calculated. In all cases, except one, it was estimated between 3.34 to 17.42 % for θ D and between 2.37 to 10.45 % for T m . However, in earlier correlations, it was reported between 10.59 to 33.38% for θ D and 6.96 to 14.95% for T m . The lower percentage deviation shows a significant improvement over the empirical relations proposed by earlier workers. The calculated values of θ D and T m from all equations are in good agreement with the available experimental values and the values reported by different workers. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)