Premium
Evolution of crystal structure of Zn:N films under high temperature
Author(s) -
Chityuttakan C.,
Wantong K.,
Chatraphorn S.,
Yoodee K.
Publication year - 2010
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201000260
Subject(s) - zinc , argon , metal , analytical chemistry (journal) , diffraction , lattice constant , crystal structure , nitrogen , sputter deposition , chemistry , sputtering , thin film , crystallography , x ray crystallography , phase (matter) , materials science , metallurgy , nanotechnology , physics , organic chemistry , chromatography , optics
Zinc‐nitrogen (Zn:N) compound thin film was prepared from a pure metallic Zn target by rf magnetron sputtering at ambient temperature under the mixture of nitrogen and argon gases with the ratio of 1:1. High temperature x‐ray diffraction (HTXRD) measurement under vacuum was used to examine the evolution of structural properties of the Zn:N film. At ambient temperature, the (002), (100), and (101) planes corresponding to Zn structure were observed while at higher temperature, the left shifts corresponding to the increase of lattice constants a and c of Zn were observed. At temperatures of 320 °C, 481 °C and 554 °C, the (222), (321) and (400) planes corresponding to Zn 3 N 2 structure were observed with the decrease in the intensity amplitudes of the peaks belonging to the Zn structure. The results indicate the gradual transformation of the Zn 3 N 2 phase in the Zn:N films at temperature greater than 320 °C. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom