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Schottky diode characteristics: Aluminium with 500 and 1000 Å thicknesses on p type WSe 2 crystal
Author(s) -
Mathai A. J.,
Patel K. D.
Publication year - 2010
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201000172
Subject(s) - thermionic emission , diode , schottky diode , quantum tunnelling , crystal (programming language) , materials science , optoelectronics , chemistry , condensed matter physics , electron , physics , quantum mechanics , computer science , programming language
The conduction properties of Al‐ p WSe 2 Schottky barrier diodes prepared identically but with different metal thickness are reported here. The p type WSe 2 semiconducting crystals used in the present study was grown by direct vapour transport technique. The current‐voltage characteristics of these diodes were analyzed from 140 K to 300 K on the basis of thermionic emission theory applying Gaussian distribution. Below 200 K, deviations were observed in barrier height, ideality factor and Richardson plot. Hence at lower temperatures, a model has been considered where the total current is assumed to be the sum of thermionic emission, generation recombination and tunneling components. The observed deviations in the diode parameters were successfully interpreted in terms of the contribution of these multiple charge transport mechanisms across the interface of the fabricated diodes. The diode with a thickness of 500 Å Al showed more homogeneous nature than with 1000 Å. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)