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PECVD growth of crystalline silicon from its tetrafluoride
Author(s) -
Sennikov P.,
Pryakhin D.,
Abrosimov N.,
Andreev B.,
Drozdov Yu.,
Drozdov M.,
Kuznetsov A.,
Murel A.,
Pohl H.J.,
Riemann H.,
Shashkin V.
Publication year - 2010
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201000090
Subject(s) - plasma enhanced chemical vapor deposition , impurity , silicon , inductively coupled plasma , plasma , chemistry , deposition (geology) , crystal (programming language) , chemical vapor deposition , crystal growth , analytical chemistry (journal) , chemical engineering , crystallography , organic chemistry , paleontology , physics , quantum mechanics , sediment , computer science , biology , programming language , engineering
The process of plasma chemical deposition of silicon from inductively coupled plasma of the mixture of high‐purity SiF 4 and H 2 sustained by RF discharge at 13.56 MHz in amount sufficient for subsequent growth of crystal by Czochralski method was investigated. The structure and impurity content of the produced layers as well as of the grown crystal have been studied (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)