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Crystal growth and defects in Ga 3 PO 7 crystals
Author(s) -
Xu Guogang,
Li Jing,
Guo Yongjie,
Han Shujuan,
Wang Jiyang
Publication year - 2010
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201000080
Subject(s) - ferroelectricity , crystallography , dielectric , crystal (programming language) , crystallographic defect , group (periodic table) , crystal growth , phosphoric acid , etching (microfabrication) , isotropic etching , flux method , etch pit density , materials science , piezoelectricity , pyroelectricity , chemistry , nanotechnology , single crystal , optoelectronics , metallurgy , composite material , layer (electronics) , organic chemistry , computer science , programming language
Crystals with a non‐centrosymmetric structure are of great interest owing to their properties such as ferroelectricity, piezoelectricity, dielectric behavior and optical properties. In this letter, Ga 3 PO 7 crystals are grown by the top‐seeded solution growth (TSSG) method from a Li 2 O‐3MoO 3 flux. It crystallizes in a non‐centrosymmetric trigonal crystal system with space group R3m within point group 3m. The growth defects are investigated by means of chemical etching method. The results reveal hot concentrated phosphoric acid to be a good etchant for Ga 3 PO 7 . The main defects are cracks, inclusions, dislocations and twin. In the meantime, the effective measures for reducing the defects are proposed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)