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Three‐dimensional study of the pressure field and advantages of hemispherical crucible in silicon Czochralski crystal growth
Author(s) -
Mokhtari F.,
Bouabdallah A.,
Merah A.,
Zizi M.,
Hanchi S.,
Alemany A.
Publication year - 2010
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201000033
Subject(s) - crucible (geodemography) , crystal (programming language) , silicon , crystal growth , materials science , field (mathematics) , symmetry (geometry) , flow (mathematics) , mechanics , vorticity , condensed matter physics , vector field , finite volume method , crystallography , chemistry , vortex , geometry , physics , metallurgy , computational chemistry , mathematics , computer science , pure mathematics , programming language
Abstract The effects of several growth parameters in cylindrical and spherical Czochralski crystal process are studied numerically and particularly, we focus on the influence of the pressure field. We present a set of three‐dimensional computational simulations using the finite volume package Fluent in two different geometries, a new geometry as cylindro‐spherical and the traditional configuration as cylindro‐cylindrical. We found that the evolution of pressure which is has not been studied before; this important function is strongly related to the vorticity in the bulk flow, the free surface and the growth interface. It seems that the pressure is more sensitive to the breaking of symmetry than the other properties that characterize the crystal growth as temperature or velocity fields. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)