Si modified Ge 10  cluster: the preparation and characterization of single crystal Na 4 (Ge,Si) 9 O 20 | Zendy

Xiao PengYan | Zendy; Ren TieZhen | Zendy; Wang ZhiQiang | Zendy; Christensen K. E. | Zendy

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Si modified Ge 10 cluster: the preparation and characterization of single crystal Na 4 (Ge,Si) 9 O 20

Author(s) -

Xiao PengYan,

Ren TieZhen,

Wang ZhiQiang,

Christensen K. E.

Publication year - 2010

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.200900746

Subject(s) - crystallography , powder diffraction , single crystal , crystal structure , hydrothermal synthesis , diffraction , cluster (spacecraft) , hydrothermal circulation , chemistry , sodium silicate , x ray crystallography , germanium , materials science , silicon , physics , chemical engineering , optics , metallurgy , programming language , computer science , engineering , organic chemistry

A Si modified Ge 10 cluster with structure Na 4 (Ge,Si) 9 O 20 (denoted as HUT‐1) was synthesized by hydrothermal synthesis at 160 °C with a sodium silicate source. The compound was characterized by single crystal, powder X‐ray diffraction and TGA‐DSC analysis. HUT‐1 crystallizes in space group I4 1 (80) with calculated unit cell (a=14.966(5) Å, c=7.343(2) Å, V=1644.8(9) Å 3 ), which has the same structure as Na 4 Ge 9 O 20 . HUT‐1 has a high Si/Ge ratio with an approximate formula of Na 4 Ge 7.68 Si 1.32 O 20 . Single crystal X‐ray structure refinements together with results from X‐ray powder diffraction (XRPD) confirm the occupancy of Si at two tetrahedral sites. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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