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Structural distortions of semiconducting silicon crystals caused by constant electric field
Author(s) -
Aboyan A. O.,
Aghbalyan S. G.
Publication year - 2010
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200900638
Subject(s) - electric field , moiré pattern , silicon , polarity (international relations) , field (mathematics) , optics , condensed matter physics , constant (computer programming) , interferometry , materials science , field effect , chemistry , optoelectronics , physics , quantum mechanics , mathematics , biochemistry , computer science , pure mathematics , cell , programming language
Structural distortions in nonpolar, particularly, in semiconducting silicon crystals, caused by constant electric field have been disclosed by means of X‐ray interferometry. It was shown that in the field both the direction of moiré fringes and the frequency (period) are changed, and the moiré patterns disappear at values of potential difference in excess of 1.5 kV. The moiré pattern obtained under the action of electrostatic field is independent of the direction (polarity) of the field, the pictures for both the polarities being completely identical. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)