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CBr 4 as precursor for VPE growth of cubic silicon carbide
Author(s) -
Watts B. E.,
Bosi M.,
Attolini G.,
Battistig G.,
Dobos L.,
Pécz B.
Publication year - 2010
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200900590
Subject(s) - hillock , silicon carbide , materials science , epitaxy , layer (electronics) , chemical engineering , crystallography , silicon , atomic force microscopy , chemistry , mineralogy , nanotechnology , composite material , metallurgy , engineering
This work presents a study of carbon tetrabromide (CBr 4 ) as precursor to deposit 3C‐SiC on (001) and (111) Si by VPE technique at temperatures ranging between 1000 °C and 1250 °C. TEM, AFM and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous crystalline layer with hillocks on top is obtained above 1200 °C. The hillocks observed at high temperature appear well faceted and their shape and orientation are analyzed in detail by AFM, showing a {311} preferred orientation. 3D island growth was suppressed by adding C 3 H 8 to the precursor gases. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)