CBr 4  as precursor for VPE growth of cubic silicon carbide | Zendy

Watts B. E. | Zendy; Bosi M. | Zendy; Attolini G. | Zendy; Battistig G. | Zendy; Dobos L. | Zendy; Pécz B. | Zendy

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CBr 4 as precursor for VPE growth of cubic silicon carbide

Author(s) -

Watts B. E.,

Bosi M.,

Attolini G.,

Battistig G.,

Dobos L.,

Pécz B.

Publication year - 2010

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.200900590

Subject(s) - hillock , silicon carbide , materials science , epitaxy , layer (electronics) , chemical engineering , crystallography , silicon , atomic force microscopy , chemistry , mineralogy , nanotechnology , composite material , metallurgy , engineering

This work presents a study of carbon tetrabromide (CBr 4 ) as precursor to deposit 3C‐SiC on (001) and (111) Si by VPE technique at temperatures ranging between 1000 °C and 1250 °C. TEM, AFM and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous crystalline layer with hillocks on top is obtained above 1200 °C. The hillocks observed at high temperature appear well faceted and their shape and orientation are analyzed in detail by AFM, showing a {311} preferred orientation. 3D island growth was suppressed by adding C 3 H 8 to the precursor gases. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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