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Well parameters of two‐dimensional electron gas in Al 0.88 In 0.12 N/AlN/GaN/AlN heterostructures grown by MOCVD
Author(s) -
Tasli P.,
Lisesivdin S. B.,
Yildiz A.,
Kasap M.,
Arslan E.,
Özcelik S.,
Ozbay E.
Publication year - 2010
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200900534
Subject(s) - heterojunction , metalorganic vapour phase epitaxy , fermi gas , chemical vapor deposition , scattering , materials science , condensed matter physics , electron mobility , hall effect , quantum well , electron , magnetic field , analytical chemistry (journal) , chemistry , optoelectronics , layer (electronics) , nanotechnology , physics , optics , epitaxy , quantum mechanics , chromatography , laser
Resistivity and Hall effect measurements were carried out as a function of magnetic field (0‐1.5 T) and temperature (30‐300 K) for Al 0.88 In 0.12 N/AlN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (MOCVD). Magnetic field dependent Hall data were analyzed by using the quantitative mobility spectrum analysis (QMSA). A two‐dimensional electron gas (2DEG) channel located at the Al 0.88 In 0.12 N/GaN interface with an AlN interlayer and a two‐dimensional hole gas (2DHG) channel located at the GaN/AlN interface were determined for Al 0.88 In 0.12 N/AlN/GaN/AlN heterostructures. The interface parameters, such as quantum well width, the deformation potential constant and correlation length as well as the dominant scattering mechanisms for the Al 0.88 In 0.12 N/GaN interface with an AlN interlayer were determined from scattering analyses based on the exact 2DEG carrier density and mobility obtained with QMSA. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)